Effects of Impact Ionization on - Characteristics of GaAs n-i-n Structures Including Hole Trap

K. Horio, H. Kusuki

研究成果: Article › 査読

本文言語	English
ページ（範囲）	541-543
ジャーナル	IEEE Electron Device Letters
巻	13
出版ステータス	Published - 1992 10月 1

引用スタイル

@article{cc8e8101f7a64b5191f3c7fb4b722419,

title = "Effects of Impact Ionization on - Characteristics of GaAs n-i-n Structures Including Hole Trap",

author = "K. Horio and H. Kusuki",

year = "1992",

month = oct,

day = "1",

language = "English",

volume = "13",

pages = "541--543",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}