Effects of impact-ionized carrier trapping by surface states on gate-lag and kink phenomena in GaAs MESFETs

A. Wakabayashi, Y. Mitani, K. Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	327-330
ジャーナル	Proceedings of ISSSE'01, Tokyo, Japan
出版ステータス	Published - 2001 7月 1

引用スタイル

@article{5bc2bc1be529483f8bc5a0f7de455aa6,

title = "Effects of impact-ionized carrier trapping by surface states on gate-lag and kink phenomena in GaAs MESFETs",

author = "A. Wakabayashi and Y. Mitani and K. Horio",

year = "2001",

month = jul,

day = "1",

language = "English",

pages = "327--330",

journal = "Proceedings of ISSSE'01, Tokyo, Japan",

}