抄録
It is found that an effective resistivity in the low voltage region depends on acceptor and trap densities and the length of the i-layer. To achieve good isolation between two devices in GaAs ICs, it is suggested that the shallow acceptor density as well as the trap density must be larger than a critical value. An analytical model has been presented to estimate the effective resistivity and the onset voltage of current rise. The backgating effect has also been analyzed in terms of a separation distance and an acceptor density.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Unknown Host Publication Title |
| 編集者 | David C. Look, John S. Blakemore |
| 出版社 | Shiva Publ Ltd, Nantwich, Engl Also |
| ページ | 354-363 |
| ページ数 | 10 |
| ISBN（印刷版） | 1850140316 |
| 出版ステータス | Published - 1984 12月 1 |
ASJC Scopus subject areas
- 工学（全般）