抄録
I-V characteristics of GaAs n-i-n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse-biased n-i junction becomes a cause of steep current rise when an acceptor density in the i-layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n-i-n structures are also simulated, and are shown to be strongly affected by existence of n-i junctions.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 563-572 |
| ページ数 | 10 |
| ジャーナル | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
| 巻 | 10 |
| 号 | 4 |
| DOI | |
| 出版ステータス | Published - 1991 4月 1 |
ASJC Scopus subject areas
- コンピュータ サイエンスの応用
- 計算理論と計算数学
- 電子工学および電気工学
- 応用数学