抄録
Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers can be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown.
| 本文言語 | English |
|---|---|
| ページ | 353-356 |
| ページ数 | 4 |
| 出版ステータス | Published - 1996 12月 1 |
| イベント | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr 継続期間: 1996 4月 29 → 1996 5月 3 |
Other
| Other | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
|---|---|
| City | Toulouse, Fr |
| Period | 96/4/29 → 96/5/3 |
ASJC Scopus subject areas
- 工学（全般）