Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

S. Arulkumaran, T. Egawa, G. Y. Zhao, H. Ishikawa, T. Jimbo, M. Umeno

研究成果: Article › 査読

引用スタイル

@article{bf1807e651f44298b473507b51621bd5,

title = "Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N",

author = "S. Arulkumaran and T. Egawa and Zhao, {G. Y.} and H. Ishikawa and T. Jimbo and M. Umeno",

year = "2000",

month = apr,

day = "1",

language = "English",

volume = "39",

pages = "L351--L353",

journal = "Jpn. J. Appl. Phys.",

}