TY - JOUR
T1 - Electron mobility on AlGaN/GaN heterostructure interface
AU - Zhao, G. Y.
AU - Ishikawa, H.
AU - Egawa, T.
AU - Jimbo, T.
AU - Umeno, M.
N1 - Funding Information:
This work was partially supported by a Grant-in-aid Scientific Research (C) (Grant No. 09650049) from The Ministry of Education, Science, Sports and Culture.
PY - 2000/5
Y1 - 2000/5
N2 - High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.
AB - High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al0.11Ga0.89N/GaN heterostructure shows the highest Hall mobility of 11 823 cm2/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced.
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U2 - 10.1016/S1386-9477(00)00097-7
DO - 10.1016/S1386-9477(00)00097-7
M3 - Conference article
AN - SCOPUS:0033691171
SN - 1386-9477
VL - 7
SP - 963
EP - 966
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 3
T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures
Y2 - 12 July 1999 through 16 July 1999
ER -