@inproceedings{7f5694cd37de46edba6052a42909df3c,
title = "Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide",
abstract = "Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltagecharacteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 Ωm was obtained for fs-laser modified area.",
keywords = "Electric conductivity, Femtosecond laser, Infrared spectra, Laser modification",
author = "T. Tomita and M. Iwami and M. Yamamoto and M. Deki and S. Matsuo and S. Hashimoto and Y. Nakagawa and T. Kitada and T. Isu and S. Saito and K. Sakai and S. Onoda and T. Ohshima",
year = "2010",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.645-648.239",
language = "English",
isbn = "0878492798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "239--242",
booktitle = "Silicon Carbide and Related Materials 2009",
note = "13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
}