The mechanisms of energy and dephasing relaxation of quasi-two-dimensional excitons in quantum well structures are clarified for both the localized and delocalized excitons. The recently observed energy relaxation rate of the n = 1 heavy hole exciton and the energy and temperature dependences of the homogeneous linewidth (ρh) are explained quantitatively. The dependence of ρh on the quantum well thickness is predicted. The relaxation mechanisms of the higher lying (e.g., n = 2) exciton states are also discussed.
|ジャーナル||Journal of Luminescence|
|出版ステータス||Published - 1987 12月 1|
ASJC Scopus subject areas
- 化学 (全般)