Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Manato Deki; Takuto Ito; Minoru Yamamoto; Takuro Tomita; Shigeki Matsuo; Shuichi Hashimoto; Takahiro Kitada; Toshiro Isu; Shinobu Onoda; Takeshi Ohshima

doi:10.1063/1.3573786

Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Manato Deki, Takuto Ito, Minoru Yamamoto, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima

研究成果: Article › 査読

13 被引用数 (Scopus)

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Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm². The resistance at the irradiation fluence of 53 J/ cm² decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.

本文言語	English
論文番号	133104
ジャーナル	Applied Physics Letters
巻	98
号	13
DOI	https://doi.org/10.1063/1.3573786
出版ステータス	Published - 2011 3月 28
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3573786

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title = "Enhancement of local electrical conductivities in SiC by femtosecond laser modification",

abstract = "Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.",

author = "Manato Deki and Takuto Ito and Minoru Yamamoto and Takuro Tomita and Shigeki Matsuo and Shuichi Hashimoto and Takahiro Kitada and Toshiro Isu and Shinobu Onoda and Takeshi Ohshima",

note = "Funding Information: We acknowledge Mr. Naoya Iwamoto at JAEA (and also The University of Electro-Communications) for helpful assistance regarding implantation and Al evaporation. This research is partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology (Grant No. 19760035) and the MURATA science foundation.",

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AU - Deki, Manato

AU - Ito, Takuto

AU - Yamamoto, Minoru

AU - Tomita, Takuro

AU - Matsuo, Shigeki

AU - Hashimoto, Shuichi

AU - Kitada, Takahiro

AU - Isu, Toshiro

AU - Onoda, Shinobu

AU - Ohshima, Takeshi

N1 - Funding Information: We acknowledge Mr. Naoya Iwamoto at JAEA (and also The University of Electro-Communications) for helpful assistance regarding implantation and Al evaporation. This research is partially supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology (Grant No. 19760035) and the MURATA science foundation.

PY - 2011/3/28

Y1 - 2011/3/28

N2 - Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.

AB - Enhancement of local electric conductivities induced by femtosecond laser modification in silicon carbide was studied. Current-voltage (I-V) characteristics of the laser-modified regions were measured between the ion-implanted metal contacts. Interestingly, the resistance sharply decreased in the fluence range from 5.0 to 6.7 J/ cm2. The resistance at the irradiation fluence of 53 J/ cm2 decreased by more than six orders of magnitude compared with the nonirradiated one. From the I-V characteristics and the scanning electron microscope observations, we conclude that the phase separation associate with the formation of classical laser induced periodic structure causes the drastic increase in electric conductivity.

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Enhancement of local electrical conductivities in SiC by femtosecond laser modification

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