Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno; Takayoshi Yoshida; Kazuyuki Hirose

doi:10.1063/1.102967

Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno, Takayoshi Yoshida, Kazuyuki Hirose

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N₂ atmosphere.

本文言語	English
ページ（範囲）	2204-2206
ページ数	3
ジャーナル	Applied Physics Letters
巻	56
号	22
DOI	https://doi.org/10.1063/1.102967
出版ステータス	Published - 1990
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.102967

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title = "Epitaxial Al Schottky contacts formed on (111) GaAs",

abstract = "Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.",

author = "Kazuyoshi Ueno and Takayoshi Yoshida and Kazuyuki Hirose",

year = "1990",

doi = "10.1063/1.102967",

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AU - Ueno, Kazuyoshi

AU - Yoshida, Takayoshi

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PY - 1990

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N2 - Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.

AB - Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.

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Epitaxial Al Schottky contacts formed on (111) GaAs

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