TY - JOUR
T1 - Exciton Lasing in ZnO-ZnCr2O4 Nanowalls
AU - Dixit, Tejendra
AU - Agrawal, Jitesh
AU - Muralidhar, Miryala
AU - Murakami, Masato
AU - Ganapathi, Kolla Lakshmi
AU - Singh, Vipul
AU - Rao, M. S.Ramachandra
N1 - Funding Information:
Manuscript received August 11, 2019; revised September 22, 2019; accepted September 28, 2019. Date of publication October 1, 2019; date of current version November 7, 2019. The paper was supported in part by Japan Student Services Organization (JASSO) for the Advanced Project Based Learning (aPBL), in part by Shibaura Institute of Technology (SIT) under the Top Global University Project, designed by the Ministry of Education, Culture, Sports, and Science & Technology in Japan. The work of T. Dixit was supported by the Indian Institute of Technology Madras through Institute Postdoctoral Fellowship. The work of K. L. Ganapathi was supported by the Department of Science and Technology, India, through sanction order no. DST/INSPIRE/04/2016/001865 under the DST INSPIRE Faculty program. Corresponding author: M. S. Ramachandra Rao (e-mail: msrrao@iitm.ac.in).
Funding Information:
The authors would like to thank SAIF, IIT Madras for the usage of UV-Visible-NIR absorption and TRPL facility. JA is thankful to UGC, India for providing the fellowship (JRF). T. Dixit, K. L. Ganapathi, and M. S. Ramachandra Rao would like to thank Department of Science and Technology (DST) that led to the establishment of Nano Functional Materials Technology Centre (SR/NM/NAT/02−2005).
Publisher Copyright:
© 2009-2012 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - We demonstrate low power continuous wave, red and NIR exciton lasing with FWHM of 1 nm, quality factor of 680 and threshold power of 100 μW in ZnO-ZnCr2O4 nanowalls. The NIR lasing was enabled by integrating ZnO with ZnCr2O4. Moreover, wavelength selective photoluminescence (tuning from UV to NIR) and enhanced two-photon emission were also observed in ZnO-ZnCr2O4 nanowalls. The exciton-exciton scattering can be attributed to the observation of exciton lasing at low temperature (<200 K). A plausible mechanism has been elucidated in order to explain the results. This work will open new opportunities in the advancement of oxide semiconductors based exciton lasers.
AB - We demonstrate low power continuous wave, red and NIR exciton lasing with FWHM of 1 nm, quality factor of 680 and threshold power of 100 μW in ZnO-ZnCr2O4 nanowalls. The NIR lasing was enabled by integrating ZnO with ZnCr2O4. Moreover, wavelength selective photoluminescence (tuning from UV to NIR) and enhanced two-photon emission were also observed in ZnO-ZnCr2O4 nanowalls. The exciton-exciton scattering can be attributed to the observation of exciton lasing at low temperature (<200 K). A plausible mechanism has been elucidated in order to explain the results. This work will open new opportunities in the advancement of oxide semiconductors based exciton lasers.
KW - Photoluminescence spectroscopy
KW - direct band transition
KW - exciton-plasmon coupling
KW - multi-layer MoS
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U2 - 10.1109/JPHOT.2019.2945010
DO - 10.1109/JPHOT.2019.2945010
M3 - Article
AN - SCOPUS:85078026109
SN - 1943-0655
VL - 11
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 6
M1 - 8854157
ER -