Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Naokatsu Ikegami; Takashi Yoshida; Akira Kojima; Hiroshi Miyaguchi; Masanori Muroyama; Shinya Yoshida; Kentaro Totsu; Nobuyoshi Koshida; Masayoshi Esashi

doi:10.1109/NEMS.2016.7758318

Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Naokatsu Ikegami, Takashi Yoshida, Akira Kojima, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, Nobuyoshi Koshida, Masayoshi Esashi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n⁺⁺-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n⁺⁺-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

本文言語	English
ホスト出版物のタイトル	2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	578-582
ページ数	5
ISBN（電子版）	9781509019472
DOI	https://doi.org/10.1109/NEMS.2016.7758318
出版ステータス	Published - 2016 11月 28
外部発表	はい
イベント	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 - Sendai, Japan 継続期間: 2016 4月 17 → 2016 4月 20

出版物シリーズ

名前	2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016

Conference

Conference	11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
国/地域	Japan
City	Sendai
Period	16/4/17 → 16/4/20

ASJC Scopus subject areas

産業および生産工学
機械工学
材料力学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/NEMS.2016.7758318

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フィンガープリント

「Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Ikegami, N., Yoshida, T., Kojima, A., Miyaguchi, H., Muroyama, M., Yoshida, S., Totsu, K., Koshida, N., & Esashi, M. (2016). Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. In 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 (pp. 578-582). Article 7758318 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2016.7758318

Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. / Ikegami, Naokatsu; Yoshida, Takashi; Kojima, Akira その他.
2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 578-582 7758318 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016).

研究成果: Conference contribution

Ikegami, N, Yoshida, T, Kojima, A, Miyaguchi, H, Muroyama, M, Yoshida, S, Totsu, K, Koshida, N & Esashi, M 2016, Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. in 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016., 7758318, 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Institute of Electrical and Electronics Engineers Inc., pp. 578-582, 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016, Sendai, Japan, 16/4/17. https://doi.org/10.1109/NEMS.2016.7758318

Ikegami N, Yoshida T, Kojima A, Miyaguchi H, Muroyama M, Yoshida S その他. Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. In 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 578-582. 7758318. (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016). doi: 10.1109/NEMS.2016.7758318

Ikegami, Naokatsu ; Yoshida, Takashi ; Kojima, Akira その他. / Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array. 2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 578-582 (2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016).

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title = "Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array",

abstract = "Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.",

author = "Naokatsu Ikegami and Takashi Yoshida and Akira Kojima and Hiroshi Miyaguchi and Masanori Muroyama and Shinya Yoshida and Kentaro Totsu and Nobuyoshi Koshida and Masayoshi Esashi",

note = "Funding Information: This work was granted by the Japan Science and Technology Agency (JST) through the {"}R&D Center of Excellence for Integrated Microsystem{"} in the {"}Creation of Innovation Centers for Advanced Interdisciplinary Research Areas Program{"} initiated by the Ministry of Education, Culture, Sports, Science and Technology (MEXT). This work was also granted by the Japan Society for the Promotion of Science (JSPS) through the {"}Funding Program for World- Leading Innovative R&D on Science and Technology (FIRST Program){"}, initiated by the Council for Science and Technology Policy (CSTP). The fabrication in this work was performed in Hands-on Access Fabrication Facility, a member of {"}Nanotechnology Platform of the MEXT, at the Center for Integrated Nanotechnology Support, Tohoku University. Publisher Copyright: {\textcopyright} 2016 IEEE.; 11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 ; Conference date: 17-04-2016 Through 20-04-2016",

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AU - Kojima, Akira

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AU - Muroyama, Masanori

AU - Yoshida, Shinya

AU - Totsu, Kentaro

AU - Koshida, Nobuyoshi

AU - Esashi, Masayoshi

N1 - Funding Information: This work was granted by the Japan Science and Technology Agency (JST) through the "R&D Center of Excellence for Integrated Microsystem" in the "Creation of Innovation Centers for Advanced Interdisciplinary Research Areas Program" initiated by the Ministry of Education, Culture, Sports, Science and Technology (MEXT). This work was also granted by the Japan Society for the Promotion of Science (JSPS) through the "Funding Program for World- Leading Innovative R&D on Science and Technology (FIRST Program)", initiated by the Council for Science and Technology Policy (CSTP). The fabrication in this work was performed in Hands-on Access Fabrication Facility, a member of "Nanotechnology Platform of the MEXT, at the Center for Integrated Nanotechnology Support, Tohoku University. Publisher Copyright: © 2016 IEEE.

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N2 - Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

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