@article{3185c633dd944857b29cb1e735663669,
title = "Femtosecond laser-induced ripple structures in semiconductor materials",
abstract = "Femtosecond laser-induced ripple structures were fabricated on semiconductor materials such as silicon and silicon carbide. While a coarse ripple was observed on both materials under the proper irradiation conditions, a fine ripple was observed only on the silicon carbide. The cross-sectional profile of ripple structure was examined by scanning electron microscopy with sliced or tilted sam-ples. Based on the experimental observations, the formation mechanism of the ripple structure was discussed.",
keywords = "Femtosecond laser, Ripple, Silicon, Silicon carbide, Threshold",
author = "Takuro Tomita and Keita Kinoshita and Toshiaki Murai and Yasuhiro Fukumori and Shigeki Matsuo and Shuichi Hashimoto",
note = "Funding Information: This research is partially supported by a Grant-in-aid from Japanese Ministry of Education, Culture, Sports, Science and Technology (17760056), and the faculty project of engineering in The University of Tokushima. We also thank Dr. Makoto Yamaguchi in the Technical Research Institute JAPAN Society for the Promotion of Machine Industry for technical assistance and fruitful discussions. Publisher Copyright: {\textcopyright} 2007 Japan Laser Processing Society.",
year = "2007",
month = jun,
day = "1",
doi = "10.2961/jlmn.2007.02.0007",
language = "English",
volume = "2",
pages = "141--145",
journal = "Journal of Laser Micro Nanoengineering",
issn = "1880-0688",
publisher = "Japan Laser Processing",
number = "2",
}