Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections

研究成果: Article › 査読

本文言語	English
ページ（範囲）	239-248
ジャーナル	Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume
巻	381
出版ステータス	Published - 1995 1月 1

引用スタイル

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title = "Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections",

author = "T. Homma",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "381",

pages = "239--248",

journal = "Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume",

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T1 - Fluorinated SiO2 Films for Interlayer Dielectrics in Quartermicron Multilevel Interconnections

AU - Homma, T.

PY - 1995/1/1

Y1 - 1995/1/1

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VL - 381

SP - 239

EP - 248

JO - Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume

JF - Low-Dielectric Constant Materials - Synthesis and Applications in Microelectronics, Proceedings Volume

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