TY - JOUR
T1 - Flux Pinning and Superconducting Properties of Bulk MgB2 with MgB4 Addition
AU - Miryala, Muralidhar
AU - Arvapalli, Sai Srikanth
AU - Diko, Pavel
AU - Jirsa, Milos
AU - Murakami, Masato
N1 - Funding Information:
This work was partly supported by Shibaura Institute of Technology (SIT) Research Center for Green Innovation and Grant-in-Aid FD research budget code: 112282. One of the authors (S.S.A.) acknowledges the financial support from SIT for his doctoral program.
Funding Information:
This work was partly supported by Shibaura Institute of Technology (SIT) Research Center for Green Innovation and Grant‐in‐Aid FD research budget code: 112282. One of the authors (S.S.A.) acknowledges support from SIT for providing the financial support for the doctoral program.
Publisher Copyright:
© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/3/1
Y1 - 2020/3/1
N2 - The improved performance of bulk MgB2 material with added nanometer-sized MgB4 particles is presented. Bulk polycrystalline MgB2 samples with varying amount of MgB4 x (x = 0, 1, 2, 3, 4, 5, and 10 wt%) are fabricated by solid-state sintering at 775 °C for 3 h in pure argon gas. Microstructural studies indicate formation of nanometer-sized grains when MgB4 is added. Density of nano-grains is inversely proportional to the MgB4 content. The MgB2 sample with 1 wt% of MgB4 shows the best performance, with its self-field critical current density reaching 385 and 315 kAcm−2 at 15 and 20 K, respectively. Flux pinning diagrams reveal the domination of grain boundary pinning mechanism.
AB - The improved performance of bulk MgB2 material with added nanometer-sized MgB4 particles is presented. Bulk polycrystalline MgB2 samples with varying amount of MgB4 x (x = 0, 1, 2, 3, 4, 5, and 10 wt%) are fabricated by solid-state sintering at 775 °C for 3 h in pure argon gas. Microstructural studies indicate formation of nanometer-sized grains when MgB4 is added. Density of nano-grains is inversely proportional to the MgB4 content. The MgB2 sample with 1 wt% of MgB4 shows the best performance, with its self-field critical current density reaching 385 and 315 kAcm−2 at 15 and 20 K, respectively. Flux pinning diagrams reveal the domination of grain boundary pinning mechanism.
KW - MgB
KW - MgB
KW - flux pinning
KW - grain refinement
KW - improved J
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U2 - 10.1002/adem.201900750
DO - 10.1002/adem.201900750
M3 - Article
AN - SCOPUS:85074858833
SN - 1438-1656
VL - 22
JO - Advanced Engineering Materials
JF - Advanced Engineering Materials
IS - 3
M1 - 1900750
ER -