@inproceedings{dd3d709fe0674a8ca9a4093e76b81dcb,
title = "Further EOT scaling of Ge/HfO2 over Si/HfO2 MOS systems",
abstract = "In this paper, we describe a comprehensive comparision between Ge/HfO2 and Si/HfO2 system through physical and electrical properties.",
keywords = "Annealing, Argon, Chemical analysis, Hafnium oxide, Human computer interaction, Nose, Semiconductor films, Sputtering, Substrates, Thickness measurement",
author = "K. Kita and M. Sasagawa and K. Tomida and M. Tohyama and K. Kyuno and A. Toriumi",
note = "Publisher Copyright: {\textcopyright} 2003 Japan Society of Applied Physics. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; International Workshop on Gate Insulator, IWGI 2003 ; Conference date: 06-11-2003 Through 07-11-2003",
year = "2003",
doi = "10.1109/IWGI.2003.159209",
language = "English",
series = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "186--191",
booktitle = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
}