TY - GEN
T1 - Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology
AU - Yarman, B. Siddik
AU - Retdian, Nicodimus
AU - Takagi, Shigetaga
AU - Fujii, Nobuo
PY - 2007/1/1
Y1 - 2007/1/1
N2 - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.
AB - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.
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U2 - 10.1109/ECCTD.2007.4529587
DO - 10.1109/ECCTD.2007.4529587
M3 - Conference contribution
AN - SCOPUS:49749146715
SN - 1424413427
SN - 9781424413423
T3 - European Conference on Circuit Theory and Design 2007, ECCTD 2007
SP - 264
EP - 267
BT - European Conference on Circuit Theory and Design 2007, ECCTD 2007
PB - IEEE Computer Society
T2 - European Conference on Circuit Theory and Design 2007, ECCTD 2007
Y2 - 26 August 2007 through 30 August 2007
ER -