GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Petr G. Eliseev; Saulius Juodkazis; Tamoya Sugahara; Hong Bo Sun; Shigeki Matsuo; Shiro Sakai; Hiroaki Misawa

doi:10.1117/12.407377

GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Petr G. Eliseev, Saulius Juodkazis, Tamoya Sugahara, Hong Bo Sun, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

研究成果: Conference article › 査読

9 被引用数 (Scopus)

抄録

Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

本文言語	English
ページ（範囲）	546-556
ページ数	11
ジャーナル	Proceedings of SPIE - The International Society for Optical Engineering
巻	4065
DOI	https://doi.org/10.1117/12.407377
出版ステータス	Published - 2000
外部発表	はい
イベント	High-Power Laser Ablation III - Santa Fe, NM, USA 継続期間: 2000 4月 24 → 2000 4月 28

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
コンピュータサイエンスの応用
応用数学
電子工学および電気工学

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abstract = "Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.",

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TY - JOUR

T1 - GaN surface ablation by fs-pulses

T2 - High-Power Laser Ablation III

AU - Eliseev, Petr G.

AU - Juodkazis, Saulius

AU - Sugahara, Tamoya

AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Sakai, Shiro

AU - Misawa, Hiroaki

PY - 2000

Y1 - 2000

N2 - Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

AB - Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.

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U2 - 10.1117/12.407377

DO - 10.1117/12.407377

M3 - Conference article

AN - SCOPUS:0033701890

SN - 0277-786X

VL - 4065

SP - 546

EP - 556

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 24 April 2000 through 28 April 2000

ER -

GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

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ASJC Scopus subject areas

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