Laser-induced ablation and surface processing were studied in GaN epitaxial layers irradiated by 130-150 fs pulses at wavelength of 398 and 795 nm. Atomic force microscopy (AFM) was used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface were determined. The laser-induced damage threshold (LIDT) was determined. Finally, a successful surface processing of GaN epitaxial layer was established.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 2000|
|イベント||High-Power Laser Ablation III - Santa Fe, NM, USA|
継続期間: 2000 4月 24 → 2000 4月 28
ASJC Scopus subject areas
- コンピュータ サイエンスの応用