Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing

研究成果: Article › 査読

本文言語	English
ページ（範囲）	796-797
ジャーナル	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2004 9月 1

引用スタイル

@article{d899525211dc4934906917772e56f9cf,

title = "Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing",

author = "H. Shimizu and Kentaro Kyuno",

year = "2004",

month = sep,

day = "1",

language = "English",

pages = "796--797",

journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing

AU - Shimizu, H.

AU - Kyuno, Kentaro

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 796

EP - 797

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -