TY - JOUR
T1 - Generation and recombination of defects in vitreous silica induced by irradiation with a near-infrared femtosecond laser
AU - Sun, Hong Bo
AU - Juodkazis, Saulius
AU - Watanabe, Mitsuru
AU - Matsuo, Shigeki
AU - Misawa, Hiroaki
AU - Nishii, Junji
PY - 2000/4/20
Y1 - 2000/4/20
N2 - Properties of defects induced by irradiation with a near-infrared femtosecond laser beam into vitreous silica are reported. Three photoluminescence bands with photon energy of 1.9, 2.7, and 4.4 eV were observed under an excitation of 5.0 eV. An isochronal annealing experiment revealed that unrelaxed oxygen vacancies ODC(II) and interstitial oxygen were generated as dominant species during the irradiation. In the annealing, diffusion of the interstitial oxygen was thermally activated, leading to a direct reduction of oxygen-deficiency-related defects such as ODC(II) and E′ center. The concentration of oxygen-excess-related defects such as peroxy radicals, together with nonbridging oxygen-hole centers, increased first with annealing then decreased with the exhaustion of oxygen and their precursor, the E′ center. The recombination of oxygen vacancies with interstitial oxygen is characterized as the major process occurring during the annealing.
AB - Properties of defects induced by irradiation with a near-infrared femtosecond laser beam into vitreous silica are reported. Three photoluminescence bands with photon energy of 1.9, 2.7, and 4.4 eV were observed under an excitation of 5.0 eV. An isochronal annealing experiment revealed that unrelaxed oxygen vacancies ODC(II) and interstitial oxygen were generated as dominant species during the irradiation. In the annealing, diffusion of the interstitial oxygen was thermally activated, leading to a direct reduction of oxygen-deficiency-related defects such as ODC(II) and E′ center. The concentration of oxygen-excess-related defects such as peroxy radicals, together with nonbridging oxygen-hole centers, increased first with annealing then decreased with the exhaustion of oxygen and their precursor, the E′ center. The recombination of oxygen vacancies with interstitial oxygen is characterized as the major process occurring during the annealing.
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U2 - 10.1021/jp992828h
DO - 10.1021/jp992828h
M3 - Article
AN - SCOPUS:20644440191
SN - 1520-6106
VL - 104
SP - 3450
EP - 3455
JO - Journal of Physical Chemistry B
JF - Journal of Physical Chemistry B
IS - 15
ER -