Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi; Masahiro Sakai; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Mitsuhiro Tanaka; Osamu Oda

Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article › 査読

抄録

For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al_0.26Ga_0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

本文言語	English
ページ（範囲）	2077-2081
ページ数	5
ジャーナル	IEICE Transactions on Electronics
巻	E86-C
号	10
出版ステータス	Published - 2003 10月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE",

abstract = "For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.",

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AU - Miyoshi, Makoto

AU - Sakai, Masahiro

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Tanaka, Mitsuhiro

AU - Oda, Osamu

PY - 2003/10

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N2 - For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

AB - For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

KW - AlGaN/GaN

KW - Bowing

KW - Heterostructure

KW - MOVPE

KW - Uniformity

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Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

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