TY - JOUR
T1 - Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
AU - Sakai, Masahiro
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
AU - Shibata, Tomohiko
AU - Asai, Keiichiro
AU - Sumiya, Shigeaki
AU - Kuraoka, Yoshitaka
AU - Tanaka, Mitsuhiro
AU - Oda, Osamu
PY - 2002/9/1
Y1 - 2002/9/1
N2 - High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.
AB - High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.
KW - A1. Characterization
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/S0022-0248(02)01573-7
DO - 10.1016/S0022-0248(02)01573-7
M3 - Article
AN - SCOPUS:0036723333
SN - 0022-0248
VL - 244
SP - 6
EP - 11
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -