TY - JOUR
T1 - Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors
AU - Nabatame, Toshihide
AU - Maeda, Erika
AU - Inoue, Mari
AU - Yuge, Kazuya
AU - Hirose, Masafumi
AU - Shiozaki, Koji
AU - Ikeda, Naoki
AU - Ohishi, Tomoji
AU - Ohi, Akihiko
N1 - Funding Information:
Acknowledgments The author wish to thank Prof. T Hashizume of Hokkaido University for helpful discussion, and are grateful to the members of the nanofabrication group of the National Institute for Materials Science for their support during this study. A part of this work was performed under the Cooperative Research Program of Institute for Joining and Welding Research Institute, Osaka University. This work was partially supported by the World Premier International Research Center Initiative (WPI) and the Ministry of Education, Culture, Sports, Science, and Technology (MEXT). ORCID iDs Toshihide Nabatame https://orcid.org/0000-0002-5973-0230 Naoki Ikeda https://orcid.org/0000-0002-9552-7467 Tomoji Ohishi https://orcid.org/0000-0001-7332-3001 Akihiko Ohi https://orcid.org/ 0000-0003-4638-0099
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Characteristics of hafnium silicate as gate dielectric in n-GaN capacitors were investigated. The Hf 0.57 Si 0.43 O x , Hf 0.64 Si 0.36 O x and HfO 2 films exhibited high dielectric constants of 15.4, 15.9, and 17.6, respectively. The Hf 0.57 Si 0.43 O x and Hf 0.64 Si 0.36 O x films, which had an amorphous structure, showed superior properties, including a minimal flatband voltage (V fb ) hysteresis (≤70 mV) and a small V fb shift (≤-0.45 V), as well as a low interface state density (∼4 × 10 11 cm -2 eV -1 at -0.4 eV from conduction band), and a high breakdown electric field (≥8.6 MV cm -1 ) compared to those of a polycrystalline HfO 2 film.
AB - Characteristics of hafnium silicate as gate dielectric in n-GaN capacitors were investigated. The Hf 0.57 Si 0.43 O x , Hf 0.64 Si 0.36 O x and HfO 2 films exhibited high dielectric constants of 15.4, 15.9, and 17.6, respectively. The Hf 0.57 Si 0.43 O x and Hf 0.64 Si 0.36 O x films, which had an amorphous structure, showed superior properties, including a minimal flatband voltage (V fb ) hysteresis (≤70 mV) and a small V fb shift (≤-0.45 V), as well as a low interface state density (∼4 × 10 11 cm -2 eV -1 at -0.4 eV from conduction band), and a high breakdown electric field (≥8.6 MV cm -1 ) compared to those of a polycrystalline HfO 2 film.
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U2 - 10.7567/1882-0786/aaf62a
DO - 10.7567/1882-0786/aaf62a
M3 - Article
AN - SCOPUS:85059871762
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 011009
ER -