抄録
AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
本文言語 | English |
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ページ | 733-736 |
ページ数 | 4 |
出版ステータス | Published - 1997 |
イベント | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong 継続期間: 1997 12月 2 → 1997 12月 5 |
Other
Other | Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) |
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City | Hong Kong, Hong Kong |
Period | 97/12/2 → 97/12/5 |
ASJC Scopus subject areas
- 工学(全般)