High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo; Hidenori Shimawaki; Shin'ichi Tanaka; Yasuyuki Suzuki

High-f_max AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo, Hidenori Shimawaki, Shin'ichi Tanaka, Yasuyuki Suzuki

研究成果: Paper › 査読

抄録

AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

本文言語	English
ページ	733-736
ページ数	4
出版ステータス	Published - 1997 12月 1
イベント	Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong 継続期間: 1997 12月 2 → 1997 12月 5

Other

Other	Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)
City	Hong Kong, Hong Kong
Period	97/12/2 → 97/12/5

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

Link to publication in Scopus

引用スタイル

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abstract = "AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.",

author = "Kazuhiko Honjo and Hidenori Shimawaki and Shin'ichi Tanaka and Yasuyuki Suzuki",

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AU - Shimawaki, Hidenori

AU - Tanaka, Shin'ichi

AU - Suzuki, Yasuyuki

PY - 1997/12/1

Y1 - 1997/12/1

N2 - AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

AB - AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

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