High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Engineering & Materials Science

• Two dimensional electron gas 100%
• Organic chemicals 87%
• Sapphire 76%
• Heterojunctions 74%
• Chemical vapor deposition 66%
• Metals 36%
• Electron mobility 29%
• Capacitance measurement 27%
• Atomic force microscopy 24%
• Voltage measurement 23%

Physics & Astronomy

• metalorganic chemical vapor deposition 54%
• sapphire 48%
• electron mobility 29%
• electrical measurement 27%
• electron gas 27%
• capacitance 22%
• atomic force microscopy 21%