High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima; T. Makimura; T. Kosugi; S. Sugitani; N. Shigekawa; H. Ishikawa; T. Egawa

doi:10.1049/el:20040512

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa, T. Egawa

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

本文言語	English
ページ（範囲）	775-776
ページ数	2
ジャーナル	Electronics Letters
巻	40
号	12
DOI	https://doi.org/10.1049/el:20040512
出版ステータス	Published - 2004 6月 10
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:20040512

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abstract = "The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.",

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AU - Shiojima, K.

AU - Makimura, T.

AU - Kosugi, T.

AU - Sugitani, S.

AU - Shigekawa, N.

AU - Ishikawa, H.

AU - Egawa, T.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

AB - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

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High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

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