High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer

H. Ishikawa, Z. Y. Zhao, N. Nakada, T. Egawa, T. Soga, T. Jimbo, M. Umeno

研究成果: Article › 査読

引用スタイル

@article{630d1587761d4462bacf71169d103e58,

title = "High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer",

author = "H. Ishikawa and Zhao, {Z. Y.} and N. Nakada and T. Egawa and T. Soga and T. Jimbo and M. Umeno",

year = "1999",

month = jul,

day = "1",

language = "English",

pages = "Mo_056",

journal = "Default journal",

}