High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami; T. Kurokawa; Y. Kakuhara; B. Withers; J. Jacobs; A. Kolics; I. Ivanov; M. Sekine; K. Ueno

High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami, T. Kurokawa, Y. Kakuhara, B. Withers, J. Jacobs, A. Kolics, I. Ivanov, M. Sekine, K. Ueno

研究成果: Conference contribution

抄録

Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

本文言語	English
ホスト出版物のタイトル	Proceedings of the IEEE 2004 International Interconnect Technology Conference
ページ	75-77
ページ数	3
出版ステータス	Published - 2004
外部発表	はい
イベント	Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States 継続期間: 2004 6月 7 → 2004 6月 9

出版物シリーズ

名前	Proceedings of the IEEE 2004 International Interconnect Technology Conference

Conference

Conference	Proceedings of the IEEE 2004 International Interconnect Technology Conference
国/地域	United States
City	Burlingame, CA
Period	04/6/7 → 04/6/9

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., Ivanov, I., Sekine, M., & Ueno, K. (2004). High reliability Cu interconnection utilizing a low contamination CoWP capping layer. In Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 75-77). (Proceedings of the IEEE 2004 International Interconnect Technology Conference).

Ishigami, T, Kurokawa, T, Kakuhara, Y, Withers, B, Jacobs, J, Kolics, A, Ivanov, I, Sekine, M & Ueno, K 2004, High reliability Cu interconnection utilizing a low contamination CoWP capping layer. in Proceedings of the IEEE 2004 International Interconnect Technology Conference. Proceedings of the IEEE 2004 International Interconnect Technology Conference, pp. 75-77, Proceedings of the IEEE 2004 International Interconnect Technology Conference, Burlingame, CA, United States, 04/6/7.

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AU - Ishigami, T.

AU - Kurokawa, T.

AU - Kakuhara, Y.

AU - Withers, B.

AU - Jacobs, J.

AU - Kolics, A.

AU - Ivanov, I.

AU - Sekine, M.

AU - Ueno, K.

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AB - Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

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M3 - Conference contribution

AN - SCOPUS:8644266012

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T3 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

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BT - Proceedings of the IEEE 2004 International Interconnect Technology Conference

T2 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

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High reliability Cu interconnection utilizing a low contamination CoWP capping layer

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出版物シリーズ

Conference

ASJC Scopus subject areas

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