TY - JOUR
T1 - High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission
AU - Liu, Yang
AU - Egawa, Takashi
AU - Ishikawa, Hiroyasu
AU - Jiang, Hao
AU - Zhang, Baijun
AU - Hao, Maosheng
AU - Jimbo, Takashi
N1 - Funding Information:
Yang Liu is grateful to JSPS (Japan Society for the Promotion of Science) for the award of Post Doctoral Fellowship (ID#02329) and he also extends his thanks to Associate Prof. Chunlin Shao and Dr. S. Arulkumaran for the help and valuable advice.
PY - 2004/3/15
Y1 - 2004/3/15
N2 - Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.
AB - Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.
KW - A3. Metalorganic chemical vapor deposition
KW - B1. Nitride
KW - B2. Semiconducting III-V materials
KW - B2. Semiconducting quaternary alloys
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U2 - 10.1016/j.jcrysgro.2004.01.012
DO - 10.1016/j.jcrysgro.2004.01.012
M3 - Article
AN - SCOPUS:1342327990
SN - 0022-0248
VL - 264
SP - 159
EP - 164
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-3
ER -