High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate

H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, H. Ishikawa, T. Egawa, T. Jimbo

研究成果: Article › 査読

引用スタイル

@article{350e40c9c29747ce9b2e05de96b2893c,

title = "High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate",

author = "H. Okita and K. Kaifu and J. Mita and T. Yamada and Y. Sano and H. Ishikawa and T. Egawa and T. Jimbo",

year = "2003",

month = may,

day = "1",

language = "English",

pages = "Tu--A3.4",

journal = "Default journal",

}