HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS.

Engineering & Materials Science

• Field effect transistors 77%
• Molecular beam epitaxy 75%
• Refractory metals 36%
• Gates (transistor) 34%
• Ion implantation 32%
• Doping (additives) 27%
• Fabrication 17%

Chemical Compounds

• Refractory Metal 100%
• Ion Implantation 88%
• Resistance 46%
• Length 43%

Physics & Astronomy

• field effect transistors 57%
• self alignment 17%
• refractory metals 15%
• ion implantation 11%
• fabrication 7%