High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)

K.Ueno K.Ueno, T.Furutuka T.Furutuka, M.Kanamori M.Kanamori, A.Higashisaka A.Higashisaka, Kazuyoshi Ueno

研究成果: Article › 査読

本文言語	English
ページ（範囲）	405-408
ジャーナル	Extended Abstracts of Solid State Devices and Materials
出版ステータス	Published - 1985 8月 1

引用スタイル

@article{19b3f6846d114968b009aa472b1e0bf2,

title = "High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)",

author = "K.Ueno K.Ueno and T.Furutuka T.Furutuka and M.Kanamori M.Kanamori and A.Higashisaka A.Higashisaka and Kazuyoshi Ueno",

year = "1985",

month = aug,

day = "1",

language = "English",

pages = "405--408",

journal = "Extended Abstracts of Solid State Devices and Materials",

}

TY - JOUR

T1 - High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)

AU - K.Ueno, K.Ueno

AU - T.Furutuka, T.Furutuka

AU - M.Kanamori, M.Kanamori

AU - A.Higashisaka, A.Higashisaka

AU - Ueno, Kazuyoshi

PY - 1985/8/1

Y1 - 1985/8/1

M3 - Article

SP - 405

EP - 408

JO - Extended Abstracts of Solid State Devices and Materials

JF - Extended Abstracts of Solid State Devices and Materials

ER -