TY - GEN
T1 - Higher-k LaYOx films with strong moisture-robustness
AU - Zhao, Yi
AU - Kita, Koji
AU - Kyuno, Kentaro
AU - Toriumi, Akira
PY - 2006
Y1 - 2006
N2 - The permittivities and the resistance to moisture of LaYOx (LYO) films annealed at 600°C with different Y concentrations are investigated. The permittivities of 40%Y-LYO film and 70%Y-LYO film are higher than 25. The high permittivities come from the well crystallized hexagonal phase of LYO films. For rare earth oxides, the hexagonal phase shows higher permittivity than the cubic phase due to the smaller molar volume of the hexagonal phase. Furthermore, the high permittivity LYO films (40%Y-LYO and 70%Y-LYO) show strong resistance to the moisture due to the introduction Of Y2O 3 which owns stronger resistance to the moisture than La 2O3.
AB - The permittivities and the resistance to moisture of LaYOx (LYO) films annealed at 600°C with different Y concentrations are investigated. The permittivities of 40%Y-LYO film and 70%Y-LYO film are higher than 25. The high permittivities come from the well crystallized hexagonal phase of LYO films. For rare earth oxides, the hexagonal phase shows higher permittivity than the cubic phase due to the smaller molar volume of the hexagonal phase. Furthermore, the high permittivity LYO films (40%Y-LYO and 70%Y-LYO) show strong resistance to the moisture due to the introduction Of Y2O 3 which owns stronger resistance to the moisture than La 2O3.
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U2 - 10.1109/ICSICT.2006.306291
DO - 10.1109/ICSICT.2006.306291
M3 - Conference contribution
AN - SCOPUS:34547315559
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 427
EP - 429
BT - ICSICT-2006
PB - IEEE Computer Society
T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 23 October 2006 through 26 October 2006
ER -