Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Toshiyuki Oishi; Naruhisa Miura; Muneyoshi Suita; Takuma Nanjo; Yuji Abe; Tatsuo Ozeki; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo

doi:10.1063/1.1590412

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

研究成果: Article › 査読

46 被引用数 (Scopus)

抄録

The formation of a highly resistive layer using heavy ion implantation was reported. It was confirmed that a heavy ion such as Zn was able to produce damage-related defects by Monte Carlo simulation. Zn above the concentration of 10¹⁷ cm^-3 was distributed through a GaN layer of 1700 nm thick, when ions were implanted by the condition where the ion energy and dose concentration were 350 keV and 1.9×10¹⁴ cm^-2, respectively.

本文言語	English
ページ（範囲）	1662-1666
ページ数	5
ジャーナル	Journal of Applied Physics
巻	94
号	3
DOI	https://doi.org/10.1063/1.1590412
出版ステータス	Published - 2003 8月 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.1590412

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AU - Oishi, Toshiyuki

AU - Miura, Naruhisa

AU - Suita, Muneyoshi

AU - Nanjo, Takuma

AU - Abe, Yuji

AU - Ozeki, Tatsuo

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

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AB - The formation of a highly resistive layer using heavy ion implantation was reported. It was confirmed that a heavy ion such as Zn was able to produce damage-related defects by Monte Carlo simulation. Zn above the concentration of 1017 cm-3 was distributed through a GaN layer of 1700 nm thick, when ions were implanted by the condition where the ion energy and dose concentration were 350 keV and 1.9×1014 cm-2, respectively.

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Highly resistive GaN layers formed by ion implantation of Zn along the c axis

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