Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada; M. Nakaji; H. Ishikawa; T. Egawa; M. Umeno; T. Jimbo

doi:10.1063/1.126171

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, M. Umeno, T. Jimbo

研究成果: Article › 査読

112 被引用数 (Scopus)

抄録

An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

本文言語	English
ページ（範囲）	1804-1806
ページ数	3
ジャーナル	Applied Physics Letters
巻	76
号	14
DOI	https://doi.org/10.1063/1.126171
出版ステータス	Published - 2000 4月 3
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.126171

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引用スタイル

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AU - Umeno, M.

AU - Jimbo, T.

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