Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka?2?

研究成果: Article › 査読

引用スタイル

@article{e63953fc0b0a42c9ad7d8f5345416eb0,

title = "Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates",

author = "S. Arulkumaran and M. Sakai and T. Egawa and H. Ishikawa and T. Jimbo and T. Shibata and K. Asai and S. Sumiya and Y. Kuraoka?2?",

year = "2002",

month = aug,

day = "1",

language = "English",

volume = "81",

pages = "1131--1133",

journal = "Appl. Phys. Lett.",

}

TY - JOUR

T1 - Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

AU - Arulkumaran, S.

AU - Sakai, M.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Shibata, T.

AU - Asai, K.

AU - Sumiya, S.

AU - Kuraoka?2?, Y.

PY - 2002/8/1

Y1 - 2002/8/1

M3 - Article

VL - 81

SP - 1131

EP - 1133

JO - Appl. Phys. Lett.

JF - Appl. Phys. Lett.

ER -