Critical current densities of YBCO single crystal have been improved with ion implantation. The sample was implanted with 120keV, 1.4×1016 O+ ions/cm2, which made the surface layer amorphous. After ion implantation the sample was re-annealed at 500°C for 80h and then cooled at a rate of 0.82°C/min in flowing O2 gas. The critical current density of single crystal YBCO sample increased by about 100% as a result of ion implantation and the crystallinity almost perfectly recovered as it was befor ion implantation by post annealing and exhibited Tc of 90K.
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