Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate

Engineering & Materials Science

• High electron mobility transistors 100%
• Electric breakdown 64%
• Annealing 57%
• Metals 55%
• Drain current 36%
• Passivation 34%
• Transconductance 34%
• Cutoff frequency 33%
• Leakage currents 30%
• Electric potential 14%

Physics & Astronomy

• high electron mobility transistors 89%
• direct current 67%
• electrical faults 28%
• metals 22%
• annealing 17%
• transconductance 15%
• passivity 13%
• cut-off 12%
• leakage 11%
• oscillations 9%
• electric potential 7%
• performance 6%