TY - GEN
T1 - Improvement of simultaneous switching noise simulation considering on-chip capacitance
AU - Ota, Kunio
AU - Matsuge, Kazuhisa
AU - Takahashi, Yo
AU - Sudo, Toshio
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Simultaneous switching noise (SSN) causes signal degradation to the high-speed interfaces among CMOS VLSIs. To achieve SSN simulation with a high accuracy, accurate models for chips, packages and printed circuit boards (PCBs) are required. However, such accurate simulation models are not currently available, since chip vendors do not release the value of on-chip capacitance and the detailed package model with mutual inductances. This paper presents our approach for establishing an accurate model without detailed information on the chip and package. The three key points of our approach are the measurement of on-chip capacitance using a vector network analyzer (VNA), the measurement of quad flat package (QFP) dimensions using X-ray photographs, and the application of 3-D electromagnetic field solver to extract a detailed equivalent circuit model for the package from a geometrical structure. The simulated SSN time-domain waveforms showed an extremely good agreement with the measured results.
AB - Simultaneous switching noise (SSN) causes signal degradation to the high-speed interfaces among CMOS VLSIs. To achieve SSN simulation with a high accuracy, accurate models for chips, packages and printed circuit boards (PCBs) are required. However, such accurate simulation models are not currently available, since chip vendors do not release the value of on-chip capacitance and the detailed package model with mutual inductances. This paper presents our approach for establishing an accurate model without detailed information on the chip and package. The three key points of our approach are the measurement of on-chip capacitance using a vector network analyzer (VNA), the measurement of quad flat package (QFP) dimensions using X-ray photographs, and the application of 3-D electromagnetic field solver to extract a detailed equivalent circuit model for the package from a geometrical structure. The simulated SSN time-domain waveforms showed an extremely good agreement with the measured results.
UR - http://www.scopus.com/inward/record.url?scp=79952392549&partnerID=8YFLogxK
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U2 - 10.1109/ISEMC.2010.5711286
DO - 10.1109/ISEMC.2010.5711286
M3 - Conference contribution
AN - SCOPUS:79952392549
SN - 9781424463053
T3 - IEEE International Symposium on Electromagnetic Compatibility
SP - 284
EP - 288
BT - IEEE International Symposium on Electromagnetic Compatibility, EMC 2010 - Final Program
T2 - 2010 IEEE International Symposium on Electromagnetic Compatibility, EMC 2010
Y2 - 25 July 2010 through 30 July 2010
ER -