TY - JOUR
T1 - Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide
AU - Taweesup, Kattareeya
AU - Yamamoto, Ippei
AU - Chikyow, Toyohiro
AU - Lothongkum, Gobboon
AU - Tsukagoshi, Kazutoshi
AU - Ohishi, Tomoji
AU - Tungasmita, Sukkaneste
AU - Visuttipitukul, Patama
AU - Ito, Kazuhiro
AU - Takahashi, Makoto
AU - Nabatame, Toshihide
N1 - Funding Information:
K. T. and G. L. acknowledge the financial support from the Thailand Research Fund and Chulalongkorn University through the Royal Golden Jubilee Ph.D. Program (Grant No. PHD/0367/2550 ). The authors are grateful to Mr. Kuszunori Kurishima for the instruction on the use of equipment, Mr. Takayuki Kishida for the fabrication of the capacitors, Dr. Shimizu Maki, and the members of the International Center for Material Nanoarchitectonics (MANA) of the National Institute for Materials Science, Japan. A part of this work was performed under the Cooperative Research Program of Institute for Joining and Welding Research Institute, Osaka University. Part of this research was supported by CREST, JST .
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80%when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.
AB - Rutheniumdoped indiumoxide (In1-xRuxOy) films fabricated using DC magnetron co-sputteringwith In2O3 and Ru targets were investigated for use as transparent conductive oxides. The In1-xRuxOy films had an amorphous structure in the wide compositional range of x = 0.3-0.8 and had an extremely smooth surface. The transmittance and resistivity of the In1-xRuxOy films increased as the Ru content increased. The transmittance of the In0.38Ru0.62Oy film improved to over 80%when the film thicknesswas less than 5 nm,while the specific resistivity (ρ) was kept to a low value of 1.6 × 10-4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In0.9Sn0.1Oy, ITO) (150 nm)/ultrathin In0.38Ru0.62Oy (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10-5 Ω cm. This ITO/In0.38Ru0.62Oy bilayer is a candidate for use as an anode for organic electroluminescent devices.
KW - Bilayers
KW - Doped indium oxide
KW - Effective work function
KW - Indium tin oxide
KW - Ruthenium
KW - Transparent conductive oxide
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U2 - 10.1016/j.tsf.2015.11.070
DO - 10.1016/j.tsf.2015.11.070
M3 - Article
AN - SCOPUS:84959079490
SN - 0040-6090
VL - 598
SP - 126
EP - 130
JO - Thin Solid Films
JF - Thin Solid Films
ER -