In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces

H. Irie, K. Kita, K. Kyuno, A. Toriumi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	724-725
ジャーナル	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2004 9月 1

引用スタイル

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AU - Toriumi, A.

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JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

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