In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si

H.Irie H.Irie, K. Kita, K. Kyuno, A. Toriumi

研究成果: Article › 査読

本文言語	English
ジャーナル	IEEE International Electron Dvice Meeting (IEDM)
出版ステータス	Published - 2004 12月 1

引用スタイル

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title = "In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si",

author = "H.Irie H.Irie and K. Kita and K. Kyuno and A. Toriumi",

year = "2004",

month = dec,

day = "1",

language = "English",

journal = "IEEE International Electron Dvice Meeting (IEDM)",

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T1 - In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in N-and P-MOS Inversion Layers on (100), (110), and (111) Si

AU - H.Irie, H.Irie

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/12/1

Y1 - 2004/12/1

M3 - Article

JO - IEEE International Electron Dvice Meeting (IEDM)

JF - IEEE International Electron Dvice Meeting (IEDM)

ER -