TY - JOUR
T1 - In-situ scanning transmission electron microscopy study of Al-amorphous SiO2 layer-SiC interface
AU - Adabifiroozjaei, Esmaeil
AU - Rastkerdar, Ebad
AU - Nemoto, Yoshihiro
AU - Nakayama, Yoshiko
AU - Nishimiya, Yuki
AU - Fronzi, Marco
AU - Yao, Yin
AU - Nguyen, Minh Triet
AU - Molina-Luna, Leopoldo
AU - Suzuki, Tohru S.
N1 - Funding Information:
E.A. acknowledges financial support of Japanese Society for Proposition of Science (JSPS KAKENHI Grant Number JP18F18064). E.A. also acknowledges Electron Microscopy Analysis Station of National Institute for Materials Science (NIMS) for provision of their resources. L.M.-L. acknowledges European Research Council (ERC) “Horizon 2020” Program under Grant No. 805359‐FOXON.
Funding Information:
E.A. acknowledges financial support of Japanese Society for Proposition of Science (JSPS KAKENHI Grant Number JP18F18064). E.A. also acknowledges Electron Microscopy Analysis Station of National Institute for Materials Science (NIMS) for provision of their resources. L.M.-L. acknowledges European Research Council (ERC) “Horizon 2020” Program under Grant No. 805359‐FOXON.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/2
Y1 - 2023/2
N2 - Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO2–SiC interface. The investigation includes electrical, chemical, and structural analysis of the interface at different temperatures (25–600 °C). The results show that at ~ 500 °C the electrical (three-orders of magnitude resistivity drop), chemical (dissolution of SiO2 amorphous layer), and microstructural features (e.g. formation of Al2O3, Si and Al4C3) of the interface start to change. According to the results, amorphous SiO2 dissolves in Al, leading to formation of α-Al2O3 and Si within the Al. In contrast, elemental interdiffusion (Al3+ ⇄ Si4+) between Al and SiC occurs resulting in formation of Al4C3. From the results, we can infer that reaction mechanism between Al and crystalline SiC is different with that between Al and SiO2 amorphous phase. It is believed that structural similarities between SiC and Al4C3 play an important role in paving the way for elemental interdiffusion.
AB - Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO2–SiC interface. The investigation includes electrical, chemical, and structural analysis of the interface at different temperatures (25–600 °C). The results show that at ~ 500 °C the electrical (three-orders of magnitude resistivity drop), chemical (dissolution of SiO2 amorphous layer), and microstructural features (e.g. formation of Al2O3, Si and Al4C3) of the interface start to change. According to the results, amorphous SiO2 dissolves in Al, leading to formation of α-Al2O3 and Si within the Al. In contrast, elemental interdiffusion (Al3+ ⇄ Si4+) between Al and SiC occurs resulting in formation of Al4C3. From the results, we can infer that reaction mechanism between Al and crystalline SiC is different with that between Al and SiO2 amorphous phase. It is believed that structural similarities between SiC and Al4C3 play an important role in paving the way for elemental interdiffusion.
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U2 - 10.1007/s10853-023-08186-z
DO - 10.1007/s10853-023-08186-z
M3 - Article
AN - SCOPUS:85146693069
SN - 0022-2461
VL - 58
SP - 2456
EP - 2468
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 6
ER -