Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Kazuya Yuge; Toshihide Nabatame; Yoshihiro Irokawa; Akihiko Ohi; Naoki Ikeda; Akira Uedono; Liwen Sang; Yasuo Koide; Tomoji Ohishi

doi:10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN

Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Akira Uedono, Liwen Sang, Yasuo Koide, Tomoji Ohishi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al₂O₃/n-GaN capacitors in shallow (around E_c) and deep (around E_v) band regions. Interface state density (D_it) estimated by conductance method increased in shallow band region at Al₂O₃/n-GaN interface after PDA at 900°C. In contrast, another D_it estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from V_fb shift also decreased after PDA at 900°C.

本文言語	English
ホスト出版物のタイトル	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	368-370
ページ数	3
ISBN（電子版）	9781538665084
DOI	https://doi.org/10.1109/EDTM.2019.8731166
出版ステータス	Published - 2019 3月
イベント	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore 継続期間: 2019 3月 12 → 2019 3月 15

出版物シリーズ

名前	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
国/地域	Singapore
City	Singapore
Period	19/3/12 → 19/3/15

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料
器械工学
ハードウェアとアーキテクチャ

文献へのアクセス

10.1109/EDTM.2019.8731166

他のファイルとリンク

引用スタイル

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y., & Ohishi, T. (2019). Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 368-370). [8731166] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. / Yuge, Kazuya; Nabatame, Toshihide; Irokawa, Yoshihiro その他.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 368-370 8731166 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

研究成果: Conference contribution

Yuge, K, Nabatame, T, Irokawa, Y, Ohi, A, Ikeda, N, Uedono, A, Sang, L, Koide, Y & Ohishi, T 2019, Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731166, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 368-370, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731166

Yuge K, Nabatame T, Irokawa Y, Ohi A, Ikeda N, Uedono A その他. Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 368-370. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731166

Yuge, Kazuya ; Nabatame, Toshihide ; Irokawa, Yoshihiro その他. / Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 368-370 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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abstract = "We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.",

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AU - Ikeda, Naoki

AU - Uedono, Akira

AU - Sang, Liwen

AU - Koide, Yasuo

AU - Ohishi, Tomoji

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