InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates

Engineering & Materials Science

• Semiconductor quantum wells 100%
• Light emitting diodes 63%
• Substrates 45%
• Electrodes 32%
• Full width at half maximum 31%
• Luminescence 31%
• Sapphire 28%
• Nitrides 25%
• Luminance 20%
• Cracks 14%
• Electric potential 11%

Physics & Astronomy

• light emitting diodes 50%
• quantum wells 49%
• electrodes 26%
• nitrides 19%
• brightness 18%
• sapphire 18%
• cracks 16%
• luminescence 16%
• wafers 16%
• output 12%
• electric potential 11%

Chemical Compounds

• Behavior as Electrode 32%
• Nitride 30%
• Voltage 23%
• Luminiscence Type 22%
• Liquid Film 15%