Investigation on SnS film by RF sputtering for photovoltaic application

Wei Guang-Pu, Zhang Zhi-Lin, Zhao Wei-Ming, Gao Xiang-Hong, Chen Wei-Qun, Hiromasa Tanamura, Masaki Yamaguchi, Hidenori Noguchi, Takao Nagatomo, Osamu Omoto

研究成果: Conference article査読

34 被引用数 (Scopus)

抄録

Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.

本文言語English
ページ(範囲)365-368
ページ数4
ジャーナルConference Record of the IEEE Photovoltaic Specialists Conference
1
出版ステータスPublished - 1994
外部発表はい
イベントProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
継続期間: 1994 12月 51994 12月 9

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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