Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

研究成果: Article › 査読

引用スタイル

@article{8ec69b3b35e3415eb22af1f59e16879e,

title = "Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density",

author = "S. Arulkumaran and T. Egawa and H. Ishikawa and T. Jimbo and M. Umeno",

year = "1998",

month = aug,

day = "1",

language = "English",

volume = "73",

pages = "809--811",

journal = "Default journal",

}