TY - JOUR
T1 - Laser-induced damage threshold and laser processing of GaN
AU - Sun, Hong Bo
AU - Juodkazis, Saulius
AU - Eliseev, P. G.
AU - Sugahara, T.
AU - Wang, Tao
AU - Matsuo, Shigeki
AU - Sakai, Shiro
AU - Misawa, Hiroaki
PY - 2000
Y1 - 2000
N2 - The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.
AB - The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.
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U2 - 10.1117/12.376976
DO - 10.1117/12.376976
M3 - Conference article
AN - SCOPUS:0033905467
SN - 0277-786X
VL - 3885
SP - 311
EP - 322
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - High-Power Laser Ablation II
Y2 - 1 November 1999 through 5 November 1999
ER -