In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing pa-rameters (pitch and pulse energy) was examined.
|ジャーナル||Journal of Laser Micro Nanoengineering|
|出版ステータス||Published - 2013 1月|
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