抄録
In this study we examined how the laser-scanning direction during the inscription of modified lines affects to the etching rate along the lines in the femtosecond laser-assisted etching. An isotropic material (silica) was used as the sample. Circular polarization was used for inscribing modified lines, in order to avoid a direction effect arising from polarization. Scanning direction dependence was observed in the etching rate along the modified lines. The relation between the occurrence of a scanning direction effect and the other inscribing pa-rameters (pitch and pulse energy) was examined.
本文言語 | English |
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ページ(範囲) | 35-38 |
ページ数 | 4 |
ジャーナル | Journal of Laser Micro Nanoengineering |
巻 | 8 |
号 | 1 |
DOI | |
出版ステータス | Published - 2013 1月 |
外部発表 | はい |
ASJC Scopus subject areas
- 器械工学
- 産業および生産工学
- 電子工学および電気工学